High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. Issue 16 (29th June 2021)

• Record Type: Journal Article
• Authors: Sakurai, Yuya; Ueno, Kohei; Kobayashi, Atsushi; Uesugi, Kenjiro; Miyake, Hideto; Fujioka, Hiroshi
• Is Part Of: Physica status solidi. Volume 218:Issue 16(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-06-29
• Subjects: epitaxy -- high electron mobility AlN -- pulsed sputtering deposition; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100074
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The formation of high‐quality n‐type AlN with a dislocation density of 2.8 × 10 8 cm −2 on sapphire (0001) using pulsed sputtering deposition (PSD) and high‐temperature (HT) annealing is demonstrated. The surface morphology of PSD‐grown AlN on AlN templates prepared by HT annealing consists of an ordered stepped‐and‐terraced structure with a step height of 1 ML. Si‐doped AlN on the HT‐annealed AlN template yields the high electron mobility of 141 cm 2 V −1 s −1 at room temperature, which is attributed to the reduction in the dislocation density and compensating centers. These results indicate that the PSD is a promising epitaxial technique for the fabrication of ultraviolet (UV) light‐emitting diodes (LEDs) and future power devices. Abstract : High electron mobility Si‐doped AlN on sapphire (0001) has been prepared via combination of pulsed sputtering deposition and high‐temperature annealing. The Si‐doped AlN with a dislocation density of 2.8 × 10 8 cm −2 yields high electron mobility of 141 cm 2 V −1 s −1 at room temperature, attributed to the reduction in the dislocation density and residual impurity concentration.