1. Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs. (February 2021) Authors: Taube, Andrzej; Kamiński, Maciej; Ekielski, Marek; Kruszka, Renata; Jankowska-Śliwińska, Joanna; Michałowski, Paweł P.; Zdunek, Joanna; Szerling, Anna Journal: Materials science in semiconductor processing Issue: Volume 122(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗