1. Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation. Issue 7 (3rd August 2019) Authors: Zhao, Jinghao; Zhou, Hang; Cui, Jiangwei; Zheng, Qiwen; Wei, Ying; Xi, Shanxue; Yu, Xuefeng; Guo, Qi Journal: Radiation effects and defects in solids Issue: Volume 174:Issue 7/8(2019) Page Start: 606 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗