Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation. Issue 7 (3rd August 2019)

• Record Type: Journal Article
• Authors: Zhao, Jinghao; Zhou, Hang; Cui, Jiangwei; Zheng, Qiwen; Wei, Ying; Xi, Shanxue; Yu, Xuefeng; Guo, Qi
• Is Part Of: Radiation effects and defects in solids. Volume 174:Issue 7/8(2019)
• Page Start: 606
• Page End: 616
• Publication Date: 2019-08-03
• Subjects: Word -- reliability -- NMOS -- total dose effect; Radiation chemistry -- Periodicals; Crystals -- Defects -- Periodicals; Crystal lattices -- Periodicals; 530.416
• DOI: 10.1080/10420150.2019.1623219
• Languages: English
• ISSNs: 1042-0150

Abstract

ABSTRACT: The authors perform gamma ray irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOSFETs as the experimental group and commercial strip-shaped gate PD SOI NMOSFETs as the control group. They analyse HCI degradation in samples and conclude that radiation could enhance HCI degradation in RH H-gate samples. Moreover, the mechanism is explained as the coupling effect between the front gate and back gate caused by TID radiation-induced trap charges in the buried oxide.