1. Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs. Issue 1 (2001) Authors: Amirante, E.; Iannaccone, G.; Pellegrini, B. Journal: VLSI design Issue: Volume 13:Issue 1/4(2001) Page Start: 425 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗