Subject: SiC/SiO2 interface -- DFT calculation -- Interface defect -- Wet oxidation -- C face - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject SiC/SiO2 interface -- DFT calculation -- Interface defect -- Wet oxidation -- C face

1. Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO2 interface after wet oxidation. (1st July 2022)

Authors:: Tsunasaki, Mukai; Ono, Tomoya; Uemoto, Mitsuharu
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number SH(2022)
Page Start:
Record Type:: Journal Article
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