Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO2 interface after wet oxidation. (1st July 2022)

• Record Type: Journal Article
• Authors: Tsunasaki, Mukai; Ono, Tomoya; Uemoto, Mitsuharu
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SH(2022)
• Publication Date: 2022-07-01
• Subjects: SiC/SiO2 interface -- DFT calculation -- Interface defect -- Wet oxidation -- C face; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac5a97
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC( 000 1 ¯ )/SiO2 interface after wet oxidation are investigated by first-principles calculation based on the density functional theory. The difference in the total energy of the defects agrees with the experimental results concerning the density of defects. We found that the characteristic behaviors of the generation of defects are explained by the positions of vacancies and antisites in the SiC( 000 1 ¯ ) substrate and that the formation of silicon and carbon vacancies is relevant to the generation mechanism of defects. The generation of silicon and carbon vacancies is attributed to the termination of dangling bonds by H atoms introduced by wet oxidation, resulting in the generation of carbon-antisite–carbon-vacancy and divacancies defects in wet oxidation.