Subject: Si, -- Ge, -- III-V - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject Si, -- Ge, -- III-V

1. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016)

Authors:: Franco, J.; Kaczer, B.; Vais, A.; Alian, A.; Arimura, H.; Putcha, V.; Sioncke, S.; Waldron, N.; Zhou, D.; Nyns, L.; Mitard, J.; Witters, L.; Heyns, M.; Groeseneken, G.; Collaert, N.; Linten, D.; Thean, A.
Journal:: MRS advances
Issue:: Volume 1:Issue 49(2016)
Page Start:: 3329
Record Type:: Journal Article
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