1. HfO2-based resistive switching memory with CNTs electrode for high density storage. (June 2017) Authors: Cheng, W.K.; Wang, F.; Han, Y.M.; Zhang, Z.C.; Zhao, J.S.; Zhang, K.L. Journal: Solid-state electronics Issue: Volume 132(2017) Page Start: 19 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗