1. Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET. (7th February 2022) Authors: Liu, Zihao; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗