1. Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations. (19th June 2018) Authors: Sun, Yabin; Liu, Ziyu; Li, Xiaojin; Ren, Jiaqi; Zheng, Fanglin; Shi, Yanling Journal: Journal of physics Issue: Volume 51:Number 27(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗