1. An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices. (18th March 2016) Authors: Chi, Xiaowei; Lan, Xiaoling; Lu, Chao; Hong, Haiyang; Li, Cheng; Chen, Songyan; Lai, Hongkai; Huang, Wei; Xu, Jianfang Journal: Materials research express Issue: Volume 3:Number 3(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗