1. BS IEC 63275-1 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability (1st April 2020) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (11 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Rules for the preparation of detail specifications for integrated circuits of assessed quality: DTL digital gate circuits (general application category). (1st December 1972) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (16 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Rules for the preparation of detail specifications for integrated circuits of assessed quality: DTL digital inverter circuits. General application category. (1st December 1975) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (18 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Test method for bias temperature instability Part 1, (5th October 2022) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (16 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗