BS IEC 63275-1 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability (1st April 2020)

Record Type:
Book
Title:
BS IEC 63275-1 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability (1st April 2020)
Main Title:
BS IEC 63275-1 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors.
Authors:
British Standards Institution,
Publisher Details:
London : British Standards Institution
Publication Date:
2020
Extent:
1 online resource (11 pages)
Subjects:
602.1841
Semiconductor technology
Semiconductor devices
Semiconductors
Diode transistor logic circuits
Transistor transistor logic circuits
Languages:
English
ISSNs:
3040-6230
Access Rights:
Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
Access Usage:
Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.
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Physical Locations:
British Library HMNTS - ELD.DS.562199
Ingest File:
03_189.xml