1. Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. (1st January 2019) Authors: Lin, Tengda; Uenuma, Mutsunori; Fururkawa, Masaaki; Bermundo, Juan Paolo Soria; Ishikawan, Yasuaki; Uraoka, Yukiharu Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P388 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. (2nd July 2019) Authors: Lin, Tengda; Uenuma, Mutsunori; Fururkawa, Masaaki; Bermundo, Juan Paolo Soria; Ishikawan, Yasuaki; Uraoka, Yukiharu Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P388 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗