1. Deep insight into DC, RF/analog, and digital inverter performance due to variation in straggle parameter for gate modulated TFET. (1st March 2019) Authors: Saha, Rajesh; Vanlalawmpuia, K.; Bhowmick, Brinda; Baishya, Srimanta Journal: Materials science in semiconductor processing Issue: Volume 91(2019) Page Start: 102 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗