Subject: CVD -- Si passivation -- strained Ge - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject CVD -- Si passivation -- strained Ge

1. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st January 2018)

Authors:: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 2(2018)
Page Start:: P66
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (20th January 2018)

Authors:: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 2(2018)
Page Start:: P66
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗