1. Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering. (1st January 2018) Authors: Salem, Nada; Ossaimee, Mahmoud; Shaker, Ahmed; Abouelatta, Mohamed Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: M23 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering. (7th February 2018) Authors: Salem, Nada; Ossaimee, Mahmoud; Shaker, Ahmed; Abouelatta, Mohamed Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: M23 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗