1. Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor. (September 2021) Authors: Sung, Ji Hoon; Park, Ju Hyun; Jeon, Dong Su; Kim, Donghyun; Yu, Min Ji; Khot, Atul C.; Dongale, Tukaram D.; Kim, Tae Geun Journal: Materials & design Issue: Volume 207(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗