Subject: 537 - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject 537

21. 2023: Year of Re‐Debut. (10th January 2023)

Authors:: Shi, Lu
Journal:: Advanced Electronic Materials
Issue:: Volume 9:Number 1(2023)
Page Start:: n/a
Record Type:: Journal Article
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22. 2D and 3D Crystal Formation of 2, 6‐Bis[4‐ethylphenyl]anthracene with Isotropic High Charge‐Carrier Mobility. (30th October 2017)

Authors:: He, Chao; Li, Aiyuan; Yan, Lijia; Zhang, Dongwei; Zhu, Yanan; Chen, Haibiao; Meng, Hong; Goto, Osamu
Journal:: Advanced Electronic Materials
Issue:: Volume 3:Number 12(2017)
Page Start:: n/a
Record Type:: Journal Article
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23. 2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage. (29th March 2019)

Authors:: Hou, Xiang; Chen, Huawei; Zhang, Zhenhan; Wang, Shuiyuan; Zhou, Peng
Journal:: Advanced Electronic Materials
Issue:: Volume 5:Number 9(2019)
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Record Type:: Journal Article
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24. 2D Diluted Multiferroic Semiconductors upon Intercalation. (8th April 2019)

Authors:: Tu, Zhengyuan; Wu, Menghao
Journal:: Advanced Electronic Materials
Issue:: Volume 5:Number 6(2019)
Page Start:: n/a
Record Type:: Journal Article
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25. 2D Doping Layer for Flexible Transparent Conducting Graphene Electrodes with Low Sheet Resistance and High Stability. (1st February 2018)

Authors:: Seo, Young‐Min; Cho, Hye‐Jin; Jang, Hyeon‐Sik; Jang, Wonseok; Lim, Jae‐Young; Jang, Yamujin; Gu, Taejun; Choi, Jae‐Young; Whang, Dongmok
Journal:: Advanced Electronic Materials
Issue:: Volume 4:Number 6(2018)
Page Start:: n/a
Record Type:: Journal Article
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26. 2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate. (21st October 2018)

Authors:: Lee, Hyun Jae; Moon, Taehwan; An, Cheol Hyun; Hwang, Cheol Seong
Journal:: Advanced Electronic Materials
Issue:: Volume 5:Number 1(2019)
Page Start:: n/a
Record Type:: Journal Article
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27. 2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019). (8th August 2019)

Authors:: Wang, Lin; Chen, Li; Wong, Swee Liang; Huang, Xin; Liao, Wugang; Zhu, Chunxiang; Lim, Yee‐Fun; Li, Dabing; Liu, Xinke; Chi, Dongzhi; Ang, Kah‐Wee
Journal:: Advanced Electronic Materials
Issue:: Volume 5:Number 8(2019)
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Record Type:: Journal Article
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28. 2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (Adv. Electron. Mater. 6/2020). (4th June 2020)

Authors:: Moon, Taehwan; Lee, Hyun Jae; Hyun, Seung Dam; Kim, Baek Su; Kim, Ho Hyun; Hwang, Cheol Seong
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 6(2020)
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Record Type:: Journal Article
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29. 2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory. (27th April 2022)

Authors:: Xia, Yan; Wang, Jing; Chen, Rui; Wang, Hongbo; Xu, Hang; Jiang, Changzhong; Li, Wenqing; Xiao, Xiangheng
Journal:: Advanced Electronic Materials
Issue:: Volume 8:Number 9(2022)
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Record Type:: Journal Article
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30. 2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors. (3rd February 2017)

Authors:: Xie, Wei; Zhang, Xin; Leighton, Chris; Frisbie, C. Daniel
Journal:: Advanced Electronic Materials
Issue:: Volume 3:Number 3(2017)
Page Start:: n/a
Record Type:: Journal Article
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