61. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode. (December 2015) Authors: Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
62. Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC*Project supported by the Key Specific Projects of Ministry of Education of China (No. 625010101), the Specific Project of the Core Devices (No. 2013ZX01001001-004), and the Science Project of State Grid (No. SGRI-WD-71-14-004). (December 2015) Authors: Han 韩, Chao 超; Zhang 张, Yuming 玉明; Song 宋, Qingwen 庆文; Tang 汤, Xiaoyan 晓燕; Guo 郭, Hui 辉; Zhang 张, Yimen 义门; Yang 杨, Fei 霏; Niu 钮, Yingxi 应喜 Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
63. Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging*Project supported by the National Natural Science Foundation of China (Nos. 61422503, 61376104), the Open Research Funds of Key Laboratory of MEMS of Ministry of Education (SEU, China), and the Fundamental Research Funds for the Central Universities. (March 2017) Authors: Yu, Yuanfang; Li, Zhenzhen; Wang, Wenhui; Guo, Xitao; Jiang, Jie; Nan, Haiyan; Ni, Zhenhua Journal: Journal of semiconductors Issue: Volume 38:Number 3(2017:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
64. Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films. (December 2017) Authors: Güllü, H. H.; Parlak, M. Journal: Journal of semiconductors Issue: Volume 38:Number 12(2017:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
65. Large signal and noise properties of heterojunction AlxGa1−xAs/GaAs DDR IMPATTs. (June 2016) Authors: Banerjee, Suranjana; Mitra, Monojit Journal: Journal of semiconductors Issue: Volume 37:Number 6(2016:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
66. Light emission of heavily doped AlGaN structures under optical pumping. (April 2018) Authors: Bokhan, P. A.; Fateev, N. V.; Osinnykh, I. V.; Malin, T. V.; Zakrevsky, Dm. E.; Zhuravlev, K. S.; Wei, Xin; Li, Jian; Chen, Lianghui Journal: Journal of semiconductors Issue: Volume 39:Number 4(2018:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
67. Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias. (July 2015) Authors: Paradeo, P. Journal: Journal of semiconductors Issue: Volume 36:Number 7(2015:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
68. Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer*Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308), the National Natural Science Foundation of Hebei Province, China (No. E2013202247), and the Department of Education-Funded Research Projects of Hebei Province, China (No. QN2014208). (July 2015) Authors: Luan 栾, Xiaodong 晓东; Liu 刘, Yuling 玉岭; Niu 牛, Xinhuan 新环; Wang 王, Juan 娟 Journal: Journal of semiconductors Issue: Volume 36:Number 7(2015:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
69. Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method*Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022). (December 2015) Authors: Liu 刘, Jian 剑; Huang 黄, Shihua 仕华; He 何, Lü 绿 Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
70. Nanoscale potential barrier distributions and their effect on current transport in Ni/n type Si Schottky diode. (December 2015) Authors: Yeganeh, M.; Balkanian, N.; Rahmatallahpur, Sh. Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗