51. High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process*Project supported by the National Basic Research Program of China (No. 2011CB922103), and the National Natural Science Foundation of China (Nos. 61376420, 61404126, A040203). (December 2015) Authors: Fu 付, Yingchun 英春; Wang 王, Xiaofeng 晓峰; Ma 马, Liuhong 刘红; Zhou 周, Yaling 亚玲; Yang 杨, Xiang 香; Wang 王, Xiaodong 晓东; Yang 杨, Fuhua 富华 Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
52. High-speed low-power voltage-programmed driving scheme for AMOLED displays*Project supported by the State Key Development Program for Basic Research of China (No. 2015CB655000) the National Natural Science Foundation of China (Nos. 61204089, 61306099, 61036007, 51173049, U1301243), and the Fundamental Research Funds for the Central Universities (Nos. 2013ZZ0046, 2014ZZ0028). (December 2015) Authors: Xia 夏, Xingheng 兴衡; Wu 吴, Weijing 为敬; Song 宋, Xiaofeng 小峰1; Li 李, Guanming 冠明; Zhou 周, Lei 雷; Zhang 张, Lirong 立荣; Xu 徐, Miao 苗; Wang 王, Lei 磊; Peng 彭, Junbiao 俊彪 Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
53. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature*Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020). (December 2015) Authors: Jang, Cholho; Ye 叶, Zhizhen 志镇; Lü 吕, Jianguo 建国 Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
54. Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration. (July 2018) Authors: Acharyya, Aritra Journal: Journal of semiconductors Issue: Volume 39:Number 7(2018:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
55. Hydrolysis preparation of the compact TiO2 layer using metastable TiCl4 isopropanol/water solution for inorganic–organic hybrid heterojunction perovskite solar cells*Project supported by the National Natural Science Foundation of China (Nos. 51472071, 51272061, 51072043), and the National Basic Research Program of China (No. 2011CBA00700). (July 2015) Authors: Dai 代, Xiaoyan 晓艳; Shi 史, Chengwu 成武; Zhang 张, Yanru 艳茹; Wu 吴, Ni 妮 Journal: Journal of semiconductors Issue: Volume 36:Number 7(2015:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
56. Influence of deposition rate on the structural, optical and electrical properties of electron beam evaporated SnO2 thin films for transparent conducting electrode applications. (August 2018) Authors: Kumar, Nitin; Joshi, Bhawana; Asokan, K. Journal: Journal of semiconductors Issue: Volume 39:Number 8(2018:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
57. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon*Project supported by the Key Program of the National Natural Science Foundation of China (No. 61334001), the National Natural Science Foundation of China (No. 51072076), the National High Technology Research and Development Program of China (Nos. 2011AA03A101, 2012AA041002), the National Key Technology Research and Development Program of China (No. 2011BAE32B01), and the Fund for Less Developed Regions of the National Natural Science Foundation of China (No.11364034). (September 2015) Authors: Mao 毛, Qinghua 清华; Liu 刘, Junlin 军林; Wu 吴, Xiaoming 小明; Zhang 张, Jianli 建立; Xiong 熊, Chuanbing 传兵; Mo 莫, Chunlan 春兰; Zhang 张, Meng 萌; Jiang 江, Fengyi 风益 Journal: Journal of semiconductors Issue: Volume 36:Number 9(2015:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
58. Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization*Project supported by the Special Project Items No. 2 in National Long-Term Technology Development Plan, China (No. 2009ZX02308). (December 2015) Authors: Jia 贾, Shaohua 少华; Liu 刘, Yuling 玉岭; Wang 王, Chenwei 辰伟; Yan 闫, Chenqi 辰奇 Journal: Journal of semiconductors Issue: Volume 36:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
59. Influence of precursor solution concentration on the structural, optical and humidity sensing properties of spray-deposited TiO2 thin films. (December 2018) Authors: Gapale, Dipak L; Arote, Sandeep A; Palve, Balasaheb M; Borse, Ratan Y Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
60. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes*Project supported by the Suzhou Research Fund (No. BY2011129) and the State Grid Corporation of China Research Fund (No. 525500140003). (October 2015) Authors: Wang 王, Hui 辉; Niu 钮, Yingxi 应喜; Yang 杨, Fei 霏; Cai 蔡, Yong 勇; Zhang 张, Zehong 泽洪; Zeng 曾, Zhongming 中明; Wang 王, Minrui 敏锐; Zeng 曾, Chunhong 春红; Zhang 张, Baoshun 宝顺 Journal: Journal of semiconductors Issue: Volume 36:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗