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3. 18‐31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T‐gate high electron mobility transistor (HEMT) process. Issue 8 (28th August 2018)

6. 2450‐MHz microwave ablation temperature simulation using temperature‐dependence feedback of characteristic parameters. Issue 1 (15th November 2018)