1. BS IEC 63275-1 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability (1st April 2020) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (11 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗