Is Part Of: Solid-state electronics. Volume 173(2020) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Is Part Of Solid-state electronics. Volume 173(2020)

1. Comparison of floating probe transient technique for on-state channel characterization & threshold voltage of an organic thin film transistor for sensing applications. (November 2020)

Authors:: Agarwal, Rajesh
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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2. Deep depletion capacitance–voltage technique for spatial distribution of traps across the substrate in MOS structures. (November 2020)

Authors:: Yoo, Han Bin; Yu, Jintae; Kim, Haesung; Ryu, Ji Hee; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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3. Editorial Board. (November 2020)

Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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4. Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure. (November 2020)

Authors:: Liu, Yulin; Ouyang, Sha; Yang, Jie; Tang, Minghua; Wang, Wei; Li, Gang; Zou, Zhi; Liang, Yifan; Li, Yucheng; Xiao, Yongguang; Yan, Shaoan; Chen, Qilai; Li, Zheng
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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5. Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process. (November 2020)

Authors:: Park, Honghwi; Lim, Changhee; Noh, Yeho; Lee, Chang-Ju; Won, Heungsup; Jung, Jaedong; Choi, Muhan; Kim, Jae-Joon; Yoo, Hocheon; Park, Hongsik
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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6. Life-time degradation of STT-MRAM by self-heating effect with TDDB model. (November 2020)

Authors:: Zhang, Xue; Zhang, Guangjun; Shen, Lijie; Yu, Pingping; Jiang, Yanfeng
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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7. Modeling OFF-state harmonics in MOS transistors used as RF switches. (November 2020)

Authors:: Niemeier, Dennis; Feick, Henning; Bartels, Martin; Cattaneo, Andrea; Malkov, Nikita
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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8. PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier. (November 2020)

Authors:: Kim, Hyun-Seop; Kang, Myoung-Jin; Jang, Won-Ho; Seo, Kwang-Seok; Kim, Hyungtak; Cha, Ho-Young
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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9. Performances of perovskite solar cells at low-intensity light irradiation. (November 2020)

Authors:: Zhu, Shusheng; Li, Yang
Journal:: Solid-state electronics
Issue:: Volume 173(2020)
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Record Type:: Journal Article
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