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- 621.38152 10
- Semiconducteurs -- Périodiques 10
- Semiconductors -- Periodicals 10
- AlGaN/GaN Schottky barrier diode -- Leakage current mechanism -- Tungsten anode -- Groove-type anode 1
- Back enhanced BE SOI -- MOSFET -- Threshold voltage -- Device architecture -- Parameter extraction -- Lateral optimization -- Triode region 1
- Germanium -- MOSFETs -- Digital etching -- Reliability -- PBTI 1
- Junctionless nanowire transistor -- Gated source/drain -- Nanowire source/drain extension -- Subthreshold swing -- Variability -- Cutoff frequency 1
- One-transistor dynamic random access memory -- Junctionless -- Trap assisted tunneling -- Band to band tunneling -- Device simulations -- Random dopant fluctuations 1
- PEDOT:PSS -- Conductivity -- Work function -- All-solution-process -- Organic photovoltaics -- Semitransparency 1
- Pre and post multilayer pHEMTs -- Nonlinearity -- Third-order intercept point -- Distortion level -- Temperature 1