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- 621.38152 18
- Semiconducteurs -- Périodiques 18
- Semiconductors -- Periodicals 18
- Amorphous InGaZnO -- Thin film transistor -- Light-illumination stability -- Ambient gases 1
- CMOS -- Axon-Hillock -- Artificial neuron -- Ultra low power -- High energy efficiency 1
- Conductive-bridge RAM (CBRAM) -- Retention -- Activation energy 1
- Grain boundary (GB) -- Three dimensional NAND (3D NAND) -- Polycrystalline-silicon (poly-Si) -- Variability -- Interface trap 1
- Graphene oxide -- Organic Light-Emitting Diodes (OLEDs) -- Hole only devices (HODs) -- Current efficiency -- Impedance spectroscopy 1
- Lightweight -- Flexible -- Transparent -- Aluminum-zinc-oxide -- Thin-film transistors 1
- MIS capacitors -- Gate dielectrics -- AlN/4H-SiC interface 1