Is Part Of: Microelectronics and reliability. Volume 91(2018)Part 2 - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Is Part Of Microelectronics and reliability. Volume 91(2018)Part 2

1. A closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistors. (December 2018)

Authors:: Yu, Fei; Xu, Chuanzhong; Huang, Gongyi; Lin, Wei; Liang, Tsair-Chun
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 307
Record Type:: Journal Article
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2. A critical analysis of the bulk current injection immunity test based on common-mode and differential-mode. (December 2018)

Authors:: Tan, Ligang; Li, Ziwen; Xiang, Yunxiu; Feng, Pengfei; Guo, Yage
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 188
Record Type:: Journal Article
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3. A novel single-event-hardened charge pump using cascode voltage switch logic gates. (December 2018)

Authors:: Yang, Zhizhan; Xie, Xiaodong; Fan, Xue; Ren, Yubo
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 269
Record Type:: Journal Article
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4. A theoretical model for calculating the effects of carrier heating with nonequilibrium hot phonons on semiconductor devices and the current-voltage relations. (December 2018)

Authors:: Tsai, Chin-Yi
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 335
Record Type:: Journal Article
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5. An artificial neural network approach for wafer dicing saw quality prediction. (December 2018)

Authors:: Su, Te-Jen; Chen, Yi-Feng; Cheng, Jui-Chuan; Chiu, Chien-Liang
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 257
Record Type:: Journal Article
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6. Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology. (December 2018)

Authors:: Zhang, Jizuo; Chen, Jianjun; Huang, Pengcheng; Li, Shouping; Fang, Liang
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 278
Record Type:: Journal Article
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7. Behavior of Au and Pd and the effects of these metals on IMCs in Pd-Au-coated copper wire. (December 2018)

Authors:: Park, Hyun-Woong; Lee, Sang-Jun; Cho, Dong-Chul; Lee, Sang-Hoon; Kim, Jae-Kyun; Lee, Jun-Hee; Jung, Sang-Kyo; Nam, Hong-Sik; Hsu, Patrick; Low, Shin; Lim, Sung-Hwan
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 283
Record Type:: Journal Article
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8. Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness. (December 2018)

Authors:: Ogden, Sean P.; Xu, Yueming; Yeap, Kong Boon; Shen, Tian; Lu, Toh-Ming; Plawsky, Joel L.
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 232
Record Type:: Journal Article
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9. Editorial Board. (December 2018)

Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: ii
Record Type:: Journal Article
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10. Evaluation of statistical variability and parametric sensitivity of non-uniformly doped Junctionless FinFET. (December 2018)

Authors:: Kaundal, Shalu; Rana, Ashwani K.
Journal:: Microelectronics and reliability
Issue:: Volume 91(2018)Part 2
Page Start:: 298
Record Type:: Journal Article
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