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- 621.36 10
- Optoelectronics -- Periodicals 10
- GaAs -- wavelength 976 nm -- DBR lasers -- coupling coefficient -- GaAs‐based vertical structure -- single‐mode operation -- side modes -- lasing gain -- threshold current -- lasing wavelength -- wavelength tuning process -- active cavity -- tunable GaAs‐based sampled‐grating distributed‐Bragg reflector laser -- tunable GaAs‐based sampled‐grating diode laser -- numerical simulations 1
- InAs‐GaAs -- radiative recombination -- quantum dot confined states -- thermal barrier decoupling -- wetting layer reduction -- full open circuit voltage recovery -- device‐level simulations -- quantum dot electronic states -- quantum‐mechanical simulations -- InAs‐GaAs quantum dot solar cells -- photovoltage loss -- wetting layer states -- doping 1
- Inx Ga1−x Asy P1−y double‐quantum‐well active regions -- optical picosecond pulse generation -- chirped double‐quantum‐well active region -- monolithic passively colliding‐pulse mode‐locked lasers -- AlGaAs‐based devices -- longitudinal lasing modes -- full width at half maximum -- autocorrelation function -- size 6 mm -- wavelength 860 nm to 880 nm -- time 1.9 ps -- Inx Ga1−x Asy P1−y -- AlGaAs 1
- Mn -- GaN -- efficiency 23.41 percent -- electron volt energy 199 meV -- efficiency 21.36 percent -- electron volt energy 1.8 eV -- valence band -- impurity -- energy gap -- wide band gap semiconductor IBSC systems -- blackbody radiation function -- biaxial strain -- alloying -- carrier losses -- intermediate band solar cells 1
- aluminium compounds -- chirp modulation -- gallium arsenide -- III‐V semiconductors -- indium compounds -- laser mode locking -- optical correlation -- quantum well lasers 1
- distributed Bragg reflector lasers -- gallium arsenide -- III‐V semiconductors -- laser cavity resonators -- laser modes -- laser tuning -- quantum well lasers 1
- doping -- wetting -- indium compounds -- gallium arsenide -- III‐V semiconductors -- semiconductor quantum dots -- solar cells -- semiconductor doping 1
- indium compounds -- gallium arsenide -- gallium compounds -- III‐V semiconductors -- laser tuning -- optical modulation -- intensity modulation -- ab initio calculations -- semiconductor lasers -- optical engineering computing 1