Optimised THz photoconductive devices based on low‐temperature grown III–V compound semiconductors incorporating distributed Bragg reflectors. Issue 2 (2nd February 2017)

• Record Type: Journal Article
• Authors: Wang, Yuekun; Kostakis, Ioannis; Saeedkia, Daryoosh; Missous, Mohamed
• Is Part Of: IET optoelectronics. Volume 11:Issue 2(2017)
• Page Start: 53
• Page End: 57
• Publication Date: 2017-02-02
• Subjects: terahertz wave devices -- photoconducting devices -- III‐V semiconductors -- distributed Bragg reflectors -- optimisation -- microwave photonics -- microwave antennas -- photoconducting switches -- microwave switches -- Hall effect -- reflectivity -- gallium arsenide -- integrated optics -- integrated optoelectronics -- electro‐optical switches; optimised THz photoconductive devices -- low‐temperature grown III‐V compound semiconductors -- distributed Bragg reflectors -- THz photoconductive antenna switches -- DBR -- Hall effect -- mid‐infrared reflectivity measurements -- pulsed excitation -- time‐domain spectroscopy system -- responsivity -- optical‐electrical efficiency -- GaAs; Optoelectronics -- Periodicals; 621.36
• DOI: 10.1049/iet-opt.2016.0055
• Languages: English
• ISSNs: 1751-8768

Abstract

Abstract : This study reports work on optimised THz photoconductive antenna switches based on low‐temperature grown materials incorporating distributed Bragg reflectors (DBRs). These materials were characterised electrically using Hall effect, mid‐infrared reflectivity measurements and fabricated antennas tested under pulsed excitation in a time‐domain spectroscopy system. It is shown that the inclusion of DBR results in enhanced THz peak signals by more than twice across the entire operating frequency range. In addition, the devices exhibit significant improvements in the relative THz power, responsivity and optical to electrical efficiency compared with the reference ones.