Journal: Solid-state electronics / Issue: Volume 149(2018) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Journal Solid-state electronics Issue Volume 149(2018)

1. Accurate semi empirical predictive model for doped and undoped double gate MOSFET. (November 2018)

Authors:: Cabré, Roger; Eshetu Muhea, Wondwosen; Iñiguez, Benjamin
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 23
Record Type:: Journal Article
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2. Al2O3 thin film multilayer structure for application in RRAM devices. (November 2018)

Authors:: Rodrigues, A.N.; Santos, Y.P.; Rodrigues, C.L.; Macêdo, M.A.
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 1
Record Type:: Journal Article
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3. An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior. (November 2018)

Authors:: Hernandez-Barrios, Y.; Cerdeira, A.; Estrada, M.; Iñiguez, B.
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 32
Record Type:: Journal Article
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4. Analyses of current-voltage characteristics using derivative methodology. (November 2018)

Authors:: Wang, Wei-Fu; Cheng, Kai-Yuan; Wu, Meng-Chyi; Hsieh, Kuang-Chien
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 15
Record Type:: Journal Article
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5. Analytical expressions for subthreshold swing in FDSOI MOS structures. (November 2018)

Authors:: Ghibaudo, G.; Pananakakis, G.
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 57
Record Type:: Journal Article
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6. Editorial Board. (November 2018)

Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: ii
Record Type:: Journal Article
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7. Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires. (November 2018)

Authors:: Razavi, Pedram; Greer, James C.
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 6
Record Type:: Journal Article
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8. Flicker modeling scheme of liquid crystal displays based on current leakage without information about TFT parameters. (November 2018)

Authors:: Kim, Dowon; Song, Seok-Jeong; Lee, Jae Hoon; Koh, Jai-Hyun; Kim, Heendol; Lee, Soo-Yeon; Lee, Gyu-Su; Nam, Hyoungsik
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 38
Record Type:: Journal Article
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9. Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2. (November 2018)

Authors:: Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 52
Record Type:: Journal Article
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10. Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs. (November 2018)

Authors:: Palumbo, Felix; Aguirre, Fernando L.; Pazos, Sebastian M.; Krylov, Igor; Winter, Roy; Eizenberg, Moshe
Journal:: Solid-state electronics
Issue:: Volume 149(2018)
Page Start:: 71
Record Type:: Journal Article
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