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Journal Solid-state electronics Issue Volume 143(2018)

1. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters. (May 2018)

Authors:
Cristoloveanu, S.; Lee, K.H.; Parihar, M.S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J.-Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T.
Journal:
Solid-state electronics
Issue:
Volume 143(2018)
Page Start:
10
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

6. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line. (May 2018)

Authors:
León Pérez, Edgar A.A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader
Journal:
Solid-state electronics
Issue:
Volume 143(2018)
Page Start:
20
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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