1. Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal. (April 2021) Authors: Yudin, N N; Antipov, O L; Gribenyukov, A I; Eranov, I D; Podzyvalov, S N; Zinoviev, M M; Voronin, L A; Zhuravleva, E V; Zykova, M P Journal: Quantum electronics Issue: Volume 51:Number 4(2021) Page Start: 306 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗