1. Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers. (November 2017) Authors: Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe Journal: Superlattices and microstructures Issue: Volume 111(2017) Page Start: 960 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells. (July 2017) Authors: Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe Journal: Superlattices and microstructures Issue: Volume 107(2017) Page Start: 293 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates. Issue 4 (12th December 2019) Authors: Delgado Carrascon, Rosalia; Tran, Dat Quoc; Sukkaew, Pitsiri; Mock, Alyssa; Ciechonski, Rafal; Ohlsson, Jonas; Zhu, Yadan; Hultin, Olof; Monemar, Bo; Paskov, Plamen P.; Samuelson, Lars; Darakchieva, Vanya Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas. (31st May 2017) Authors: Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe Journal: Applied physics express Issue: Volume 10:Number 6(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications. (1st February 2023) Authors: Guo, Anqi; Zhang, Lichun; Cao, Ning; Lu, Taiping; Zhu, Yadan; Dan Tian, ; Zhou, Zhiying; He, Shunli; Xia, Bin; Zhao, Fengzhou Journal: Applied physics express Issue: Volume 16:Number 2(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗