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Author/Creator Zhou, Xuanze

1. Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes. (28th July 2022)

Authors:
Jian, Guangzhong; Hao, Weibing; Shi, Zhongyu; Han, Zhao; Zhou, Kai; Liu, Qi; He, Qiming; Zhou, Xuanze; Chen, Chen; Zhou, Yanguang; Zhao, Xiaolong; Xu, Guangwei; Long, Shibing
Journal:
Journal of physics
Issue:
Volume 55:Number 30(2022)
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Journal Article
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2. Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing. Issue 3 (22nd December 2019)

Authors:
Lv, Yuanjie; Zhou, Xingye; Long, Shibing; Wang, Yuangang; Song, Xubo; Zhou, Xuanze; Xu, Guangwei; Liang, Shixiong; Feng, Zhihong; Cai, Shujun; Fu, Xingchang; Pu, Aimin; Liu, Ming
Journal:
Physica status solidi
Issue:
Volume 14:Issue 3(2020)
Page Start:
n/a
Record Type:
Journal Article
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3. Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2. (9th October 2019)

Authors:
Lv, Yuanjie; Zhou, Xingye; Long, Shibing; Liang, Shixiong; Song, Xubo; Zhou, Xuanze; Dong, Hang; Wang, Yuangang; Feng, Zhihong; Cai, Shujun
Journal:
Semiconductor science and technology
Issue:
Volume 34:Number 11(2019)
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Record Type:
Journal Article
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4. Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal. (1st June 2022)

Authors:
Shi, Zhongyu; Xiang, Xueqiang; Zhang, Haochen; He, Qiming; Jian, Guangzhong; Zhou, Kai; Zhou, Xuanze; Xing, Chong; Xu, Guangwei; Long, Shibing
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 6(2022)
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Record Type:
Journal Article
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