Author/Creator: Zhou, Xiaorun - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Zhou, Xiaorun

1. Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers. (November 2017)

Authors:: Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe
Journal:: Superlattices and microstructures
Issue:: Volume 111(2017)
Page Start:: 960
Record Type:: Journal Article
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2. Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells. (July 2017)

Authors:: Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe
Journal:: Superlattices and microstructures
Issue:: Volume 107(2017)
Page Start:: 293
Record Type:: Journal Article
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3. Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas. (31st May 2017)

Authors:: Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe
Journal:: Applied physics express
Issue:: Volume 10:Number 6(2017)
Page Start:
Record Type:: Journal Article
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