1. Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs*Supported by Hong Kong, Macao and Taiwan Science & Technology Cooperation Program of China under Grant No 2014DFH10190, the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021, the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092, and the Qing Lan Project. (August 2015) Authors: Zhang, Chun-Wei; Liu, Si-Yang; Sun, Wei-Feng; Zhou, Lei-Lei; Zhang, Yi; Su, Wei; Zhang, Ai-Jun; Liu, Yu-Wei; Hu, Jiu-Li; He, Xiao-Wei Journal: Chinese physics letters Issue: Volume 32:Number 8(2015:Aug.) Page Start: 225 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗