Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs*Supported by Hong Kong, Macao and Taiwan Science & Technology Cooperation Program of China under Grant No 2014DFH10190, the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021, the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092, and the Qing Lan Project. (August 2015)

• Record Type: Journal Article
• Authors: Zhang, Chun-Wei; Liu, Si-Yang; Sun, Wei-Feng; Zhou, Lei-Lei; Zhang, Yi; Su, Wei; Zhang, Ai-Jun; Liu, Yu-Wei; Hu, Jiu-Li; He, Xiao-Wei
• Is Part Of: Chinese physics letters. Volume 32:Number 8(2015:Aug.)
• Page Start: 225
• Publication Date: 2015-08
• Subjects: Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1088/0256-307X/32/8/088502
• Languages: English
• ISSNs: 0256-307X

Abstract

<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>The dependencies of hot-carrier-induced degradations on the effective channel length L_{<italic>ch, eff</italic>} are investigated for n-type metal-oxide-semiconductor field effect transistor (MOSFETs). Our experiments find that, with decreasing L_{<italic>ch, eff</italic>}, the saturation drain current (I_{<italic>dsat</italic>}) degradation is unexpectedly alleviated. The further study demonstrates that the anomalous L_{<italic>ch, eff</italic>} dependence of I_{<italic>dsat</italic>} degradation is induced by the increasing influence of the substrate current degradation on the I_{<italic>dsat</italic>} degradation with L_{<italic>ch, eff</italic>} reducing.</p> </abstract>