1. A high-efficiency aging test with new data processing method for semiconductor device. (April 2023) Authors: Yang, Xinhuan; Sang, Qianqian; Zhang, Jianyu; Wang, Chuanzheng; Yu, Mingyan; Zhao, Yuanfu Journal: Microelectronics and reliability Issue: Volume 143(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A multi-parameter fitting method based on matrix transformation for device aging modeling. (March 2023) Authors: Sang, Qianqian; Yang, Xinhuan; Zhang, Jianyu; Wang, Chuanzheng; Yu, Mingyan; Zhao, Yuanfu Journal: Microelectronics and reliability Issue: Volume 142(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. An asymmetric Doherty amplifier with class‐J mode in GaAs HBT technology for n78 frequency band. Issue 10 (27th July 2022) Authors: Zhou, Jiuding; Yi, Chupeng; Wang, Yuchen; Liu, Wenliang; Lu, Yang; Hou, Bin; Ma, Xiaohua; Zhao, Yuanfu; Hao, Yue Journal: International journal of RF and microwave computer-aided engineering Issue: Volume 32:Issue 10(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Degradation in super-junction MOSFET under successive exposure of heavy ion strike and gamma ray irradiation. (May 2022) Authors: Li, Xinyu; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Fang, Xingyu; Wang, Liang; Jia, Guo; Deng, Zhonghan Journal: Microelectronics and reliability Issue: Volume 132(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress. (June 2022) Authors: Wang, Lihao; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Hu, Dongqing; Wu, Yu; Wang, Liang; Li, Tongde; Deng, Zhonghan Journal: Microelectronics and reliability Issue: Volume 133(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs. (October 2022) Authors: Wang, Lihao; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Wang, Liang; Li, Tongde; Hu, Dongqing; Wu, Yu; Deng, Zhonghan Journal: Microelectronics and reliability Issue: Volume 137(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Matching by pixel distribution comparison: Multisource image template matching. Issue 2 (8th December 2022) Authors: Mei, Lichun; Zhao, Yuanfu; Wang, Huaiye; Wang, Caiyun; Zhang, Jun; Zhao, Xiaoxia Journal: IET signal processing Issue: Volume 17:Issue 2(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness. (2nd December 2021) Authors: Wang, Lihao; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Wang, Liang; Hu, Dongqing; Wu, Yu; Deng, Zhonghan Journal: Japanese journal of applied physics Issue: Volume 60:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Temperature‐dependent dynamic RDS, ON under different operating conditions in enhancement‐mode GaN HEMTs. Issue 3 (1st February 2020) Authors: Li, Yuan; Zhao, Yuanfu; Huang, Alex Q.; Zhang, Liqi; Huang, Qingyun; Yu, Ruiyang; Sen, Soumik; Ma, Qingxuan; He, Yunlong Journal: IET power electronics Issue: Volume 13:Issue 3(2020) Page Start: 456 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗