Temperature‐dependent dynamic RDS, ON under different operating conditions in enhancement‐mode GaN HEMTs. Issue 3 (1st February 2020)

• Record Type: Journal Article
• Authors: Li, Yuan; Zhao, Yuanfu; Huang, Alex Q.; Zhang, Liqi; Huang, Qingyun; Yu, Ruiyang; Sen, Soumik; Ma, Qingxuan; He, Yunlong
• Is Part Of: IET power electronics. Volume 13:Issue 3(2020)
• Page Start: 456
• Page End: 462
• Publication Date: 2020-02-01
• Subjects: wide band gap semiconductors -- III‐V semiconductors -- high electron mobility transistors -- gallium compounds -- silicon -- elemental semiconductors -- semiconductor device testing; gallium nitride high electron mobility transistor -- nonmonotonic temperature‐dependence -- enhancement‐mode gallium nitride HEMTs -- commercial E‐mode gallium nitride HEMT devices -- temperature dependence dynamic resistance -- high‐voltage enhancement‐mode gallium nitride high electron mobility transistor -- power density -- silicon power devices -- power converter applications -- conduction loss -- circuit level -- double‐pulse‐tester -- DC‐link voltages -- buffer‐induced trapping effect -- de‐trapping effect -- electron mobility -- GaN -- Si; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2019.0540
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : High‐voltage enhancement‐mode (E‐mode) gallium nitride (GaN) high electron mobility transistor (HEMT) is a superior candidate to enable higher efficiency and higher power density when compared with silicon power devices in power converter applications. However, the dynamic R DS, ON problem affects the conduction loss of the converter and remains one of the major issues that must be resolved. In this study, a comprehensive experimental evaluation and analysis method of the temperature‐dependent dynamic R DS, ON of GaN HEMT in a circuit level is proposed. A commercial E‐mode GaN HEMT (GS66508T) is used as a sample to study the temperature‐dependent dynamic R DS, ON using a double‐pulse‐tester. The temperature‐dependent dynamic R DS, ON under different DC‐link voltages and different load currents are studied and the results show a non‐monotonic temperature‐dependence of the dynamic R DS, ON . It is concluded that the temperature dependence of the buffer‐induced trapping and de‐trapping effect, and the temperature dependence of electron mobility together influence the dynamic R DS, ON of E‐mode GaN HEMT device during operation. This finding is important since in converter applications the devices are typically operating at elevated temperatures. The proposed comprehensive experimental method can be used to estimate and analyse the dynamic R DS, ON characteristics of other GaN devices.