Author/Creator: Zhang, Ruoxuan - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Zhang, Ruoxuan

1. Hierarchical FeCo2S4@FeNi2S4 Core/Shell Nanostructures on Ni Foam for High‐Performance Supercapacitors. Issue 62 (9th October 2019)

Authors:: Huang, Yunxia; Ge, Shuaipeng; Chen, Xiaojuan; Xiang, Zhongcheng; Zhang, Xinran; Zhang, Ruoxuan; Cui, Yimin
Journal:: Chemistry
Issue:: Volume 25:Issue 62(2019)
Page Start:: 14117
Record Type:: Journal Article
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2. Improvement of resistive switching in δ-CsPbI3 devices by inserting carbon nanotube. (23rd February 2023)

Authors:: Yang, Xiaoting; Ye, Zhanhong; Wang, Ke; Zhang, Ruoxuan; Wei, Huanqi; Cui, Yimin
Journal:: Physica scripta
Issue:: Volume 98:Number 3(2023)
Page Start:
Record Type:: Journal Article
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3. Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias. (29th April 2020)

Authors:: Ge, Shuaipeng; Guan, Xinwei; Wang, Yutao; Lin, Chun‐Ho; Cui, Yimin; Huang, Yunxia; Zhang, Xinran; Zhang, Ruoxuan; Yang, Xiaoting; Wu, Tom
Journal:: Advanced functional materials
Issue:: Volume 30:Number 25(2020)
Page Start:: n/a
Record Type:: Journal Article
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4. Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device. Issue 7 (14th March 2019)

Authors:: Ge, Shuaipeng; Huang, Yunxia; Chen, Xiaojuan; Zhang, Xinran; Xiang, Zhongcheng; Zhang, Ruoxuan; Li, Wenping; Cui, Yimin
Journal:: Advanced materials interfaces
Issue:: Volume 6:Issue 7(2019)
Page Start:: n/a
Record Type:: Journal Article
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5. Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi2I7/ITO Structure. Issue 17 (12th May 2022)

Authors:: Yang, Xiaoting; Zhong, Shuai; Wang, Ke; Ye, Zhanhong; Zhang, Ruoxuan; Wei, Huanqi; Zhao, Lirong; Li, Wenping; Chen, Yan; Cui, Yimin
Journal:: Advanced materials interfaces
Issue:: Volume 9:Issue 17(2022)
Page Start:: n/a
Record Type:: Journal Article
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