Improvement of resistive switching in δ-CsPbI3 devices by inserting carbon nanotube. (23rd February 2023)

• Record Type: Journal Article
• Authors: Yang, Xiaoting; Ye, Zhanhong; Wang, Ke; Zhang, Ruoxuan; Wei, Huanqi; Cui, Yimin
• Is Part Of: Physica scripta. Volume 98:Number 3(2023)
• Publication Date: 2023-02-23
• Subjects: δ-CsPbI3 -- resistive switching -- carbon nanotube -- strength of conductive filaments; Physics -- Periodicals; 530.05
• DOI: 10.1088/1402-4896/acbbb0
• Languages: English
• ISSNs: 0031-8949

Abstract

Abstract: CsPbI3 is considered to one potential material in the future resistive random access memory(RRAM). There are four crystal types of CsPbI3, among which δ phase is the most stable and available to commercialize. However, the inherent defect of δ -CsPbI3 results in its inferior switching performance to other crystal types. Here, we present a new structure to solve this problem. Carbon nanotube (CNT) was inserted into the two interfaces of Ag/ δ -CsPbI3 /ITO and Ag/ δ -CsPbI3 /FTO to adjust its resistance switching performance. It is found that the introduction of carbon nanotube layer can effectively control durability of RRAM devices through influencing strength of conductive filaments. These findings present a new strategy for the future design of δ -CsPbI3 memory.