Author/Creator: Zhang, Bingke - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Zhang, Bingke

1. A dual channel three-terminal np-LDMOS with both majorities for conduction. (February 2018)

Authors:: Kong, Moufu; Yi, Bo; Zhang, Bingke
Journal:: Superlattices and microstructures
Issue:: Volume 114(2018)
Page Start:: 154
Record Type:: Journal Article
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2. A Novel Ga2O3 Superjunction LDMOS Using P-Type Diamond with Improved Performance. (1st October 2022)

Authors:: Kong, Moufu; Gao, Jiacheng; Cheng, Zeyu; Hu, Zewei; Zhang, Bingke
Journal:: ECS journal of solid state science and technology
Issue:: Volume 11:Number 10(2022)
Page Start:
Record Type:: Journal Article
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3. A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance. (1st October 2022)

Authors:: Kong, Moufu; Duan, Yuanmiao; Gao, Jiacheng; Yan, Ronghe; Zhang, Bingke; Yang, Hongqiang
Journal:: Semiconductor science and technology
Issue:: Volume 37:Number 10(2022)
Page Start:
Record Type:: Journal Article
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4. Construction of hollow Co3O4 cubes as a high-performance anode for lithium ion batteries. (11th July 2017)

Authors:: Li, Li; Zhang, Zichao; Ren, Sijia; Zhang, Bingke; Yang, Shuhua; Cao, Bingqiang
Journal:: New journal of chemistry
Issue:: Volume 41:Number 16(2017)
Page Start:: 7960
Record Type:: Journal Article
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5. Hydrocephalus due to aqueductal stenosis presenting with acute bilateral ptosis: case report. (1st November 2020)

Authors:: Wu, Mingxing; Ge, Xiushan; Li, Yanbin; Li, Jiye; Ma, Minglei; Wu, Di; Peng, Xiaoyin; Zhang, Bingke
Journal:: British journal of neurosurgery
Issue:: Volume 34:Number 6(2020)
Page Start:: 683
Record Type:: Journal Article
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6. Intradiploic hematoma in an infant: case report and literature review. (2nd November 2018)

Authors:: Luo, Wei; Wu, Di; Wu, Mingxing; Chen, Qian; Zhang, Bingke
Journal:: British journal of neurosurgery
Issue:: Volume 32:Number 6(2018)
Page Start:: 691
Record Type:: Journal Article
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7. Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region. (5th September 2019)

Authors:: Zhang, Bingke; Kong, Moufu; Yi, Bo; Hu, Huan; Chen, Weizhen; Chen, Xingbi
Journal:: Semiconductor science and technology
Issue:: Volume 34:Number 10(2019)
Page Start:
Record Type:: Journal Article
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