1. A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation. (22nd May 2019) Authors: Liu, Chuan; Chen, Changdong; Li, Xiaojie; Hu, Sujuan; Liu, Chenning; Huang, Kairong; Dai, Fuhua; Zhang, Baijun; Liu, Xuying; Minari, Takeo; Noh, Yong‐Young; Chen, Jun Journal: Advanced functional materials Issue: Volume 29:Number 29(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer. (6th April 2022) Authors: Liu, Honghui; Liang, Zhiwen; Yan, Chaokun; Liu, Yuebo; Wang, Fengge; Xu, Yanyan; Shen, Junyu; Xiao, Zhengwen; Wu, Zhisheng; Liu, Yang; Wang, Qi; Wang, Xinqiang; Zhang, Baijun Other Names: Nayak Maheswar Academic Editor. Journal: Advances in condensed matter physics Issue: Volume 2022(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Current Spreading Effects in Vertical GaN‐Based Light‐Emitting Diode on Si(111) Substrate. Issue 4 (1st July 2016) Authors: Wei, Jingting; Zhang, Baijun; Wang, Gang Journal: Chinese journal of electronics Issue: Volume 25:Issue 4(2016) Page Start: 672 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates. (15th November 2018) Authors: Han, Xiaobiao; Luo, Hui; Yang, Hang; Chen, Jie; Zhong, Changming; Liang, Jiezhi; Xing, Jieying; Wu, Zhisheng; Liu, Yang; Zhang, Baijun Journal: Materials science in semiconductor processing Issue: Volume 87(2018) Page Start: 181 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Enhanced voltage blocking ability of AlGaN/GaN heterojunction FETs-on-Si by eliminating leakage path introduced by low-temperature-AlN interlayers. (30th May 2017) Authors: Chen, Zijun; Li, Liuan; He, Zhiyuan; Yang, Fan; He, Lei; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Journal: Japanese journal of applied physics Issue: Volume 56:Number 6(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer. (17th February 2015) Authors: Chen, Weijie; Hu, Guoheng; Lin, Jiali; Jiang, Jianliang; Liu, Minggang; Yang, Yibin; Hu, Gangwei; Lin, Yan; Wu, Zhisheng; Liu, Yang; Zhang, Baijun Journal: Applied physics express Issue: Volume 8:Number 3(2015:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. (21st September 2015) Authors: Ni, Yiqiang; Zhou, Deqiu; Chen, Zijun; Zheng, Yue; He, Zhiyuan; Yang, Fan; Yao, Yao; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. (October 2015) Authors: Ni, Yiqiang; Zhou, Deqiu; Chen, Zijun; Zheng, Yue; He, Zhiyuan; Yang, Fan; Yao, Yao; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: 1151 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis. Issue 5 (29th January 2016) Authors: Zhou, Deqiu; Ni, Yiqiang; He, Zhiyuan; Yang, Fan; Yao, Yao; Shen, Zhen; Zhong, Jian; Zhou, Guilin; Zheng, Yue; He, Liang; Wu, Zhisheng; Zhang, Baijun; Liu, Yang Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor. Journal: Physica status solidi Issue: Volume 13:Issue 5/6(2016:May) Page Start: 345 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors. Issue 10 (20th May 2016) Authors: Shen, Zhen; He, Liang; Zhou, Guilin; Yao, Yao; Yang, Fan; Ni, Yiqiang; Zheng, Yue; Zhou, Deqiu; Ao, Jinping; Zhang, Baijun; Liu, Yang Journal: Physica status solidi Issue: Volume 213:Issue 10(2016:Oct.) Page Start: 2693 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗