1. Low‐leakage sub‐threshold 9 T‐SRAM cell in 14‐nm FinFET technology. (7th November 2016) Authors: Zeinali, Behzad; Madsen, Jens Kargaard; Raghavan, Praveen; Moradi, Farshad Journal: International journal of circuit theory and applications Issue: Volume 45:Number 11(2017:Nov.) Page Start: 1647 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗