1. Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Issue 9 (August 2015) Authors: La Grassa, M.; Meneghini, M.; De Santi, C.; Mandurrino, M.; Goano, M.; Bertazzi, F.; Zeisel, R.; Galler, B.; Meneghesso, G.; Zanoni, E. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1775 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation. (November 2015) Authors: Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, M.; You, S.; Decoutere, S.; Marcon, D.; Stoffels, S.; Ronchi, N.; Meneghesso, G. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 9 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. (September 2019) Authors: Borga, M.; Meneghini, M.; Benazzi, D.; Canato, E.; Püsche, R.; Derluyn, J.; Abid, I.; Medjdoub, F.; Meneghesso, G.; Zanoni, E. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs. (November 2022) Authors: Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias. (September 2019) Authors: Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature. (November 2021) Authors: Chiocchetta, F.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Comparison between Cu(In, Ga)Se2 solar cells with different back contacts submitted to current stress. (November 2022) Authors: Bertoncello, M.; Barbato, M.; Caria, A.; Buffolo, M.; De Santi, C.; Rampino, S.; Pattini, F.; Spaggiari, G.; Trivellin, N.; Vogrig, D.; Zanoni, E.; Meneghesso, G.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs. (September 2016) Authors: Benvegnù, A.; Laurent, S.; Meneghini, M.; Quéré, R.; Roux, J.-L.; Zanoni, E.; Barataud, D. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 535 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs. (September 2016) Authors: Benvegnù, A.; Laurent, S.; Meneghini, M.; Quéré, R.; Roux, J.-L.; Zanoni, E.; Barataud, D. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 535 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs. (November 2022) Authors: Masin, F.; De Santi, C.; Lettens, J.; Geenen, F.; Meneghesso, G.; Zanoni, E.; Moens, P.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗