1. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients. (September 2016) Authors: Ariff, A.; Zainal, N.; Hassan, Z. Journal: Superlattices and microstructures Issue: Volume 97(2016) Page Start: 193 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Behavior of Etching Process on Formation of Porous Polycrystalline GaN Layer through Electroless Etching. (1st January 2016) Authors: Md Taib, M. Ikram; Zainal, N.; Hassan, Z.; Bakar, M. Abu Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 10(2016) Page Start: P584 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Behavior of Etching Process on Formation of Porous Polycrystalline GaN Layer through Electroless Etching. (7th September 2016) Authors: Md Taib, M. Ikram; Zainal, N.; Hassan, Z.; Bakar, M. Abu Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 10(2016) Page Start: P584 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Characteristics of porous GaN prepared by KOH photoelectrochemical etching. (8th December 2014) Authors: Radzali, R.; Zainal, N.; Yam, F. K.; Hassan, Z. Journal: Materials research innovations Issue: Volume 18:Number 6(2014) Page Start: S6-412 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Controlled nucleation time for improving aluminum nitride growth. (October 2021) Authors: Samsudin, M.E.A.; Yusuf, Y.; Ahmad, M.A.; Zainal, N. Journal: Materials science in semiconductor processing Issue: Volume 133(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effect of nucleation time on GaN layer grown on different shapes of patterned sapphire substrate. (25th July 2022) Authors: Taib, M. Ikram Md; Waheeda, S.N.; Zainal, N. Journal: International journal of nanotechnology Issue: Volume 19:Number 2/5(2022) Page Start: 327 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN. (June 2015) Authors: Azimah, E.; Zainal, N.; Shuhaimi, A.; Hassan, Z. Journal: Superlattices and microstructures Issue: Volume 82(2015) Page Start: 592 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Fabrication and characterization of copper doped zinc oxide by using Co-sputtering technique. (January 2018) Authors: Yusof, A.S.; Hassan, Z.; Zainal, N. Journal: Materials research bulletin Issue: Volume 97(2018) Page Start: 314 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Fabrication of porous aluminium nitride films on silicon substrate for a better overgrown layer. (8th December 2014) Authors: Alvin, Y. S. M.; Zainal, N.; Hassan, Z. Journal: Materials research innovations Issue: Volume 18:Number 6(2014) Page Start: S6-375 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique. (December 2018) Authors: Zainal, N.; Samsudin, M.E.A.; Taib, Muhamad Ikram Md; Ahmad, M.A.; Ariff, A.; Alwadai, N.; Roqan, I.S. Journal: Materials science in semiconductor processing Issue: Volume 88(2018) Page Start: 40 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗