1. Crystalline quality of GaAs1−xBix grown below 250 °C using molecular beam epitaxy. (1st April 2022) Authors: Tominaga, Yoriko; Horita, Yukihiro; Takagaki, Yuto; Nishiyama, Fumitaka; Yukimune, Mitsuki; Ishikawa, Fumitaro Journal: Applied physics express Issue: Volume 15:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Molecular beam epitaxial growth of GaAs/GaNAsBi core–multishell nanowires. (8th November 2021) Authors: Okujima, Masahiro; Yoshikawa, Kohei; Mori, Shota; Yukimune, Mitsuki; Richards, Robert D.; Zhang, Bin; Chen, Weimin M.; Buyanova, Irina A.; Ishikawa, Fumitaro Journal: Applied physics express Issue: Volume 14:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy. Issue 6 (3rd February 2023) Authors: Minehisa, Keisuke; Murakami, Ryo; Hashimoto, Hidetoshi; Nakama, Kaito; Sakaguchi, Kenta; Tsutsumi, Rikuo; Tanigawa, Takeru; Yukimune, Mitsuki; Nagashima, Kazuki; Yanagida, Takeshi; Sato, Shino; Hiura, Satoshi; Murayama, Akihiro; Ishikawa, Fumitaro Journal: Nanoscale advances Issue: Volume 5:Issue 6(2023) Page Start: 1651 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗