Crystalline quality of GaAs1−xBix grown below 250 °C using molecular beam epitaxy. (1st April 2022)

• Record Type: Journal Article
• Authors: Tominaga, Yoriko; Horita, Yukihiro; Takagaki, Yuto; Nishiyama, Fumitaka; Yukimune, Mitsuki; Ishikawa, Fumitaro
• Is Part Of: Applied physics express. Volume 15:Number 4(2022)
• Publication Date: 2022-04-01
• Subjects: semiconductors -- thin films -- crystal growth -- crystal structure -- X-ray diffraction -- Rutherford backscattering; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac5ba5
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: This study revealed the crystalline quality of the dilute bismide alloy GaAs1− x Bi x grown on a GaAs(001) substrate below 250 °C using molecular beam epitaxy. The substrate temperature and As flux played a dominant role in tuning the crystal structure between amorphous and single crystalline GaAs1− x Bi x, as well as in the Bi introduction in GaAs below 250 °C. Sample characterization demonstrated a substrate temperature of 250 °C produced single crystalline ∼200 nm thick GaAs0.982 Bi0.018 with clear X-ray diffraction fringes, while the lower substrate temperature of 180 °C yielded an amorphous film. Rutherford backscattering spectrometry showed sufficient As supply at the growing surface provides uniform Bi distribution.