1. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015) Authors: Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. (30th January 2020) Authors: Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 13:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Biogeochemistry of sedimentary phosphorus species in the world's longest river on an Island, the Kapuas River (West Kalimantan, Indonesia). Issue 8 (14th September 2022) Authors: You, Shuzhen; Loh, Pei Sun; Chen, Chen-Tung Arthur; Anshari, Gusti Z.; Wang, Jough-Tai; Lou, Jiann-Yuh; Wang, Shu-Lun; Wang, Bing-Jye; Chen, Hong-Young Journal: Chemistry and ecology Issue: Volume 38:Issue 8(2022) Page Start: 773 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect. (28th January 2021) Authors: You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan Journal: Semiconductor science and technology Issue: Volume 36:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. (February 2021) Authors: Li, Xiangdong; Geens, Karen; Amirifar, Nooshin; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan Journal: Journal of semiconductors Issue: Volume 42:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers. Issue 5 (2nd May 2016) Authors: Hu, Jie; Stoffels, Steve; Lenci, Silvia; You, Shuzhen; Bakeroot, Benoit; Ronchi, Nicolò; Venegas, Rafael; Groeseneken, Guido; Decoutere, Stefaan Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1229 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. (5th February 2020) Authors: Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 13:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Vertical GaN devices: Process and reliability. (November 2021) Authors: You, Shuzhen; Geens, Karen; Borga, Matteo; Liang, Hu; Hahn, Herwig; Fahle, Dirk; Heuken, Michael; Mukherjee, Kalparupa; De Santi, Carlo; Meneghini, Matteo; Zanoni, Enrico; Berg, Martin; Ramvall, Peter; Kumar, Ashutosh; Björk, Mikael T.; Ohlsson, B. Jonas; Decoutere, Stefaan Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗